ROHM SCT2160KEHRC11

Manufacturer No:

SCT2160KEHRC11

Manufacturer:

ROHM

Package:

TO-247-3

Description:

SiCFET (Silicon Carbide) N-Channel 208mOhm @ 7A, 18V +22V, -6V 1200 pF @ 800 V 62 nC @ 18 V 1200 V TO-247-3

Quantity:

In Stock :7889

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SCT2160KEHRC11 Information

ROHM SCT2160KEHRC11 technical specifications, attributes, parameters and parts with similar specifications to ROHM SCT2160KEHRC11.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-247-3

Supplier Device Package
TO-247N

Mfr
Rohm Semiconductor

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
18V

Power Dissipation (Max)
165W (Tc)

Series
Automotive, AEC-Q101

Operating Temperature
175°C (TJ)

Type
Parameter

Technology
SiCFET (Silicon Carbide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
208mOhm @ 7A, 18V

Vgs(th) (Max) @ Id
4V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 800 V

Current - Continuous Drain (Id) @ 25°C
22A (Tc)

Gate Charge (Qg) (Max) @ Vgs
62 nC @ 18 V

Drain to Source Voltage (Vdss)
1200 V

Vgs (Max)
+22V, -6V

Download datasheets and manufacturer documentation for ROHM SCT2160KEHRC11.

SCT2160KEHRC11 Overview

An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1200 pF @ 800 V is its maximum input capacitance.For this transistor to work, a voltage 1200 V is required between drain and source (Vdss).