ROHM SCT2160KEGC11

Manufacturer No:

SCT2160KEGC11

Manufacturer:

ROHM

Package:

TO-247-3

Description:

SiCFET (Silicon Carbide) N-Channel 208mOhm @ 7A, 18V +22V, -6V 1200 pF @ 800 V 62 nC @ 18 V 1200 V TO-247-3

Quantity:

In Stock :8364

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SCT2160KEGC11 Information

ROHM SCT2160KEGC11 technical specifications, attributes, parameters and parts with similar specifications to ROHM SCT2160KEGC11.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-247-3

Supplier Device Package
TO-247N

Mfr
Rohm Semiconductor

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
18V

Power Dissipation (Max)
165W (Tc)

Operating Temperature
175°C (TJ)

Technology
SiCFET (Silicon Carbide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
208mOhm @ 7A, 18V

Vgs(th) (Max) @ Id
4V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 800 V

Current - Continuous Drain (Id) @ 25°C
22A (Tc)

Gate Charge (Qg) (Max) @ Vgs
62 nC @ 18 V

Drain to Source Voltage (Vdss)
1200 V

Vgs (Max)
+22V, -6V

Download datasheets and manufacturer documentation for ROHM SCT2160KEGC11.

SCT2160KEGC11 Overview

A device's maximum input capacitance is 1200 pF @ 800 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 1200 V drain to source voltage (Vdss).