ROHM SCT2120AFC
Manufacturer No:
SCT2120AFC
Manufacturer:
ROHM
Package:
TO-220-3
Description:
SiCFET (Silicon Carbide) N-Channel Tube 156m ? @ 10A, 18V +22V, -6V 1200pF @ 500V 61nC @ 18V TO-220-3
Quantity:
In Stock :8453
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SCT2120AFC Information
ROHM SCT2120AFC technical specifications, attributes, parameters and parts with similar specifications to ROHM SCT2120AFC.
- Type
- Parameter
- Factory Lead Time
- 19 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Weight
- 6.000006g
- Operating Temperature
- 175°C TJ
- Packaging
- Tube
- Published
- 2011
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Technology
- SiCFET (Silicon Carbide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Number of Elements
- 1
- Number of Channels
- 1
- Power Dissipation-Max
- 165W Tc
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM SCT2120AFC.
SCT2120AFC Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 500V.This device conducts a continuous drain current (ID) of 29A, which is the maximum continuous current transistor can conduct.Using VGS=650V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 650V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 72A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 22 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 22V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 18V volts (18V).
SCT2120AFC Features
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 72A.
a threshold voltage of 4V
SCT2120AFC Applications
There are a lot of ROHM Semiconductor
SCT2120AFC applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
15,000+
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