ROHM RZQ050P01TR
Manufacturer No:
RZQ050P01TR
Manufacturer:
ROHM
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 26m ? @ 5A, 4.5V ±10V 2850pF @ 6V 35nC @ 4.5V 12V SOT-23-6 Thin, TSOT-23-6
Quantity:
In Stock :3107
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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RZQ050P01TR Information
ROHM RZQ050P01TR technical specifications, attributes, parameters and parts with similar specifications to ROHM RZQ050P01TR.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2004
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
Download datasheets and manufacturer documentation for ROHM RZQ050P01TR.
RZQ050P01TR Overview
A device's maximum input capacitance is 2850pF @ 6V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-12V, and this device has a drain-to-source breakdown voltage of -12V voltage.Its drain current is 5A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 420 ns.Its maximum pulsed drain current is 20A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -300mV.To operate this transistor, you need to apply a 12V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4.5V) to reduce its overall power consumption.
RZQ050P01TR Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 420 ns
based on its rated peak drain current 20A.
a threshold voltage of -300mV
a 12V drain to source voltage (Vdss)
RZQ050P01TR Applications
There are a lot of ROHM Semiconductor
RZQ050P01TR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
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