ROHM RZF013P01TL
Manufacturer No:
RZF013P01TL
Manufacturer:
ROHM
Package:
3-SMD, Flat Lead
Description:
MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 260m ? @ 1.3A, 4.5V ±10V 290pF @ 6V 2.4nC @ 4.5V 12V 3-SMD, Flat Lead
Quantity:
In Stock :8735
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RZF013P01TL Information
ROHM RZF013P01TL technical specifications, attributes, parameters and parts with similar specifications to ROHM RZF013P01TL.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 3-SMD, Flat Lead
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2009
- JESD-609 Code
- e2
- Pbfree Code
- yes
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Copper (Sn/Cu)
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 10
Download datasheets and manufacturer documentation for ROHM RZF013P01TL.
RZF013P01TL Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 290pF @ 6V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.In order for DS breakdown voltage to remain above 12V, it should remain above the 12V level.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.5V 4.5V).
RZF013P01TL Features
a continuous drain current (ID) of 1.3A
a 12V drain to source voltage (Vdss)
RZF013P01TL Applications
There are a lot of ROHM Semiconductor
RZF013P01TL applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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12.28 M
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