ROHM RW1E025RPT2CR
Manufacturer No:
RW1E025RPT2CR
Manufacturer:
ROHM
Package:
SOT-563, SOT-666
Description:
MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 75m ? @ 2.5A, 10V ±20V 480pF @ 10V 5.2nC @ 5V 30V SOT-563, SOT-666
Quantity:
In Stock :6644
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RW1E025RPT2CR Information
ROHM RW1E025RPT2CR technical specifications, attributes, parameters and parts with similar specifications to ROHM RW1E025RPT2CR.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- JESD-609 Code
- e2
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Terminal Finish
- TIN COPPER
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 10
Download datasheets and manufacturer documentation for ROHM RW1E025RPT2CR.
RW1E025RPT2CR Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 480pF @ 10V.This device conducts a continuous drain current (ID) of 2.5A, which is the maximum continuous current transistor can conduct.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).
RW1E025RPT2CR Features
a continuous drain current (ID) of 2.5A
a 30V drain to source voltage (Vdss)
RW1E025RPT2CR Applications
There are a lot of ROHM Semiconductor
RW1E025RPT2CR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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