ROHM RW1C025ZPT2CR
Manufacturer No:
RW1C025ZPT2CR
Manufacturer:
ROHM
Package:
SOT-563, SOT-666
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 65m ? @ 2.5A, 4.5V ±10V 1300pF @ 10V 21nC @ 4.5V 20V SOT-563, SOT-666
Quantity:
In Stock :8198
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RW1C025ZPT2CR Information
ROHM RW1C025ZPT2CR technical specifications, attributes, parameters and parts with similar specifications to ROHM RW1C025ZPT2CR.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- JESD-609 Code
- e2
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Copper (Sn/Cu)
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
Download datasheets and manufacturer documentation for ROHM RW1C025ZPT2CR.
RW1C025ZPT2CR Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1300pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 110 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.In order for DS breakdown voltage to remain above 20V, it should remain above the 20V level.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.5V 4.5V).
RW1C025ZPT2CR Features
a continuous drain current (ID) of 2.5A
the turn-off delay time is 110 ns
a 20V drain to source voltage (Vdss)
RW1C025ZPT2CR Applications
There are a lot of ROHM Semiconductor
RW1C025ZPT2CR applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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