ROHM RW1A013ZPT2R
Manufacturer No:
RW1A013ZPT2R
Manufacturer:
ROHM
Package:
SOT-563, SOT-666
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 260m ? @ 1.3A, 4.5V ±10V 290pF @ 6V 2.4nC @ 4.5V 12V SOT-563, SOT-666
Quantity:
In Stock :1160
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2. For in-stock parts, orders normally could be shipped out within 1-2days.
RW1A013ZPT2R Information
ROHM RW1A013ZPT2R technical specifications, attributes, parameters and parts with similar specifications to ROHM RW1A013ZPT2R.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2013
- Part Status
- Not For New Designs
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Number of Elements
- 1
- Number of Channels
- 1
- Power Dissipation-Max
- 400mW Ta
Download datasheets and manufacturer documentation for ROHM RW1A013ZPT2R.
Datasheets:
RW1A013ZPT2R Overview
A device's maximal input capacitance is 290pF @ 6V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -12V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This transistor requires a 12V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.5V 4.5V).
RW1A013ZPT2R Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 30 ns
a 12V drain to source voltage (Vdss)
RW1A013ZPT2R Applications
There are a lot of ROHM Semiconductor
RW1A013ZPT2R applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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