ROHM RV8C010UNHZGG2CR

Manufacturer No:

RV8C010UNHZGG2CR

Manufacturer:

ROHM

Package:

3-XFDFN

Description:

MOSFET (Metal Oxide) N-Channel 470mOhm @ 500mA, 4.5V ±8V 40 pF @ 10 V 20 V 3-XFDFN

Quantity:

In Stock :3410

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

RV8C010UNHZGG2CR Information

ROHM RV8C010UNHZGG2CR technical specifications, attributes, parameters and parts with similar specifications to ROHM RV8C010UNHZGG2CR.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
3-XFDFN

Supplier Device Package
DFN1010-3W

Mfr
Rohm Semiconductor

Package
Digi-Reel?

Product Status
Active

Power Dissipation (Max)
1W

Base Product Number
RV8C010

Series
Automotive, AEC-Q101

Operating Temperature
150°C (TJ)

Type
Parameter

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
470mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id
1V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V

Current - Continuous Drain (Id) @ 25°C
1A (Ta)

Drain to Source Voltage (Vdss)
20 V

Vgs (Max)
±8V

Download datasheets and manufacturer documentation for ROHM RV8C010UNHZGG2CR.

RV8C010UNHZGG2CR Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 40 pF @ 10 V.This transistor requires a drain-source voltage (Vdss) of 20 V.