ROHM RUC002N05T116
Manufacturer No:
RUC002N05T116
Manufacturer:
ROHM
Package:
SST3, 3 PIN
Description:
Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SST3, 3 PIN
Quantity:
In Stock :7065
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Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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RUC002N05T116 Information
ROHM RUC002N05T116 technical specifications, attributes, parameters and parts with similar specifications to ROHM RUC002N05T116.
- Type
- Parameter
- Pbfree Code
- Yes
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Active
- Ihs Manufacturer
- ROHM CO LTD
- Package Description
- SST3, 3 PIN
- Pin Count
- 3
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Factory Lead Time
- 21 Weeks
- Samacsys Manufacturer
- ROHM Semiconductor
- Type
- Parameter
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 50 V
- Drain Current-Max (ID)
- 0.2 A
- Drain-source On Resistance-Max
- 2.4 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code
- R-PDSO-G3
- JESD-609 Code
- e1
- Moisture Sensitivity Level
- 1
- Number of Elements
- 1
- Number of Terminals
- 3
Download datasheets and manufacturer documentation for ROHM RUC002N05T116.
RUC002N05T116 Overview
A device's maximum input capacitance is 25pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 0.2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.For normal operation, maintain the DS breakdown voltage above 50V.To operate this transistor, you need to apply a 50V drain to source voltage (Vdss).This device uses no drive voltage (1.2V 4.5V) to reduce its overall power consumption.
RUC002N05T116 Features
a continuous drain current (ID) of 200mA
the turn-off delay time is 15 ns
a 50V drain to source voltage (Vdss)
RUC002N05T116 Applications
There are a lot of ROHM Semiconductor
RUC002N05T116 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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