ROHM RUC002N05HZGT116
Manufacturer No:
RUC002N05HZGT116
Manufacturer:
ROHM
Package:
TO-236-3, SC-59, SOT-23-3
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) ±8V 25pF @ 10V 50V TO-236-3, SC-59, SOT-23-3
Quantity:
In Stock :7062
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step6：Packaging Box
SHIPPING COST
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RUC002N05HZGT116 Information
ROHM RUC002N05HZGT116 technical specifications, attributes, parameters and parts with similar specifications to ROHM RUC002N05HZGT116.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Series
- Automotive, AEC-Q101
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Power Dissipation-Max
- 350mW Ta
- FET Type
- N-Channel
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 25pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 200mA Ta
- Drain to Source Voltage (Vdss)
- 50V
- Drive Voltage (Max Rds On,Min Rds On)
- 1.2V 4.5V
Download datasheets and manufacturer documentation for ROHM RUC002N05HZGT116.
Other Related Documents:
RUC002N05HZGT116 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 25pF @ 10V.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.6Ohm.The transistor must receive a 50V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.2V 4.5V).
RUC002N05HZGT116 Features
single MOSFETs transistor is 1.6Ohm
a 50V drain to source voltage (Vdss)
RUC002N05HZGT116 Applications
There are a lot of ROHM Semiconductor
RUC002N05HZGT116 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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