ROHM RU1J002YNTCL
Manufacturer No:
RU1J002YNTCL
Manufacturer:
ROHM
Package:
SC-85
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.2 ? @ 200mA, 4.5V ±8V 26pF @ 10V SC-85
Quantity:
In Stock :8258
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RU1J002YNTCL Information
ROHM RU1J002YNTCL technical specifications, attributes, parameters and parts with similar specifications to ROHM RU1J002YNTCL.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-85
- Number of Pins
- 85
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2016
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F3
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ROHM RU1J002YNTCL.
RU1J002YNTCL Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 26pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 50V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 50V.There is no drain current on this device since the maximum continuous current it can conduct is 0.2A.As a result of its turn-off delay time, which is 17 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.In addition to reducing power consumption, this device uses drive voltage (0.9V 4.5V).
RU1J002YNTCL Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 17 ns
RU1J002YNTCL Applications
There are a lot of ROHM Semiconductor
RU1J002YNTCL applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
