ROHM RU1C001UNTCL
Manufacturer No:
RU1C001UNTCL
Manufacturer:
ROHM
Package:
SC-85
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.5 ? @ 100mA, 4.5V ±12V 7.1pF @ 10V SC-85
Quantity:
In Stock :6853
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RU1C001UNTCL Information
ROHM RU1C001UNTCL technical specifications, attributes, parameters and parts with similar specifications to ROHM RU1C001UNTCL.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-85
- Number of Pins
- 85
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2004
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F3
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ROHM RU1C001UNTCL.
RU1C001UNTCL Overview
A device's maximum input capacitance is 7.1pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Its maximum pulsed drain current is 0.4A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.This device uses no drive voltage (1.2V 4.5V) to reduce its overall power consumption.
RU1C001UNTCL Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 0.4A.
RU1C001UNTCL Applications
There are a lot of ROHM Semiconductor
RU1C001UNTCL applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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In-stock SKU
15,000+
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