ROHM RTQ040P02TR
Manufacturer No:
RTQ040P02TR
Manufacturer:
ROHM
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 50m ? @ 4A, 4.5V ±12V 1350pF @ 10V 12.2nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6
Quantity:
In Stock :6631
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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RTQ040P02TR Information
ROHM RTQ040P02TR technical specifications, attributes, parameters and parts with similar specifications to ROHM RTQ040P02TR.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2004
- JESD-609 Code
- e1
- Pbfree Code
- yes
- Type
- Parameter
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Resistance
- 85MOhm
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -20V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
Download datasheets and manufacturer documentation for ROHM RTQ040P02TR.
RTQ040P02TR Overview
A device's maximum input capacitance is 1350pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.Its drain current is 4A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -2V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
RTQ040P02TR Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 60 ns
a threshold voltage of -2V
a 20V drain to source voltage (Vdss)
RTQ040P02TR Applications
There are a lot of ROHM Semiconductor
RTQ040P02TR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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12.28 M
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