RTQ030P02TR-ROHM-Price, Stock & Datasheet

RTQ030P02TR Overview

A device's maximal input capacitance is 800pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 3A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -2V threshold voltage.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.5V 4.5V).

RTQ030P02TR Features

a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 50 ns
a threshold voltage of -2V
a 20V drain to source voltage (Vdss)