ROHM RT1C060UNTR
Manufacturer No:
RT1C060UNTR
Manufacturer:
ROHM
Package:
8-SMD, Flat Lead
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 28m ? @ 6A, 4.5V ±10V 870pF @ 10V 11nC @ 4.5V 20V 8-SMD, Flat Lead
Quantity:
In Stock :3063
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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RT1C060UNTR Information
ROHM RT1C060UNTR technical specifications, attributes, parameters and parts with similar specifications to ROHM RT1C060UNTR.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2010
- Pbfree Code
- yes
- Type
- Parameter
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 8
Download datasheets and manufacturer documentation for ROHM RT1C060UNTR.
RT1C060UNTR Overview
A device's maximum input capacitance is 870pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 6A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 24A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.For normal operation, maintain the DS breakdown voltage above 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4.5V) to reduce its overall power consumption.
RT1C060UNTR Features
a continuous drain current (ID) of 6A
based on its rated peak drain current 24A.
a 20V drain to source voltage (Vdss)
RT1C060UNTR Applications
There are a lot of ROHM Semiconductor
RT1C060UNTR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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