ROHM RSS100N03FU6TB
Manufacturer No:
RSS100N03FU6TB
Manufacturer:
ROHM
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 13m ? @ 10A, 10V 1070pF @ 10V 14nC @ 5V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :9802
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RSS100N03FU6TB Information
ROHM RSS100N03FU6TB technical specifications, attributes, parameters and parts with similar specifications to ROHM RSS100N03FU6TB.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2004
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Termination
- SMD/SMT
- Type
- Parameter
- ECCN Code
- EAR99
- Resistance
- 18.9MOhm
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 2W Ta
- Power Dissipation
- 2W
- Turn On Delay Time
- 10 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 13m ? @ 10A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 1070pF @ 10V
Download datasheets and manufacturer documentation for ROHM RSS100N03FU6TB.
RSS100N03FU6TB Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1070pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In addition to reducing power consumption, this device uses drive voltage (4V 10V).
RSS100N03FU6TB Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 55 ns
a threshold voltage of 2.5V
RSS100N03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS100N03FU6TB applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
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