ROHM RSS090P03FU6TB
Manufacturer No:
RSS090P03FU6TB
Manufacturer:
ROHM
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 14m ? @ 9A, 10V 4000pF @ 10V 39nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :1051
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RSS090P03FU6TB Information
ROHM RSS090P03FU6TB technical specifications, attributes, parameters and parts with similar specifications to ROHM RSS090P03FU6TB.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2004
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Type
- Parameter
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Configuration
- Single
- Power Dissipation-Max
- 2W Ta
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 2W
- Turn On Delay Time
- 25 ns
- FET Type
- P-Channel
- Rds On (Max) @ Id, Vgs
- 14m ? @ 9A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
Download datasheets and manufacturer documentation for ROHM RSS090P03FU6TB.
RSS090P03FU6TB Overview
A device's maximum input capacitance is 4000pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-30V, and this device has a drain-to-source breakdown voltage of -30V voltage.Its drain current is 9A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 150 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -2.5V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4V 10V) to reduce its overall power consumption.
RSS090P03FU6TB Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 150 ns
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)
RSS090P03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS090P03FU6TB applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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12.28 M
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