ROHM RSS040P03FU6TB
Manufacturer No:
RSS040P03FU6TB
Manufacturer:
ROHM
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 58mOhm @ 4A, 10V ±20V 800pF @ 10V 8nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :6754
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2. For in-stock parts, orders normally could be shipped out within 1-2days.
RSS040P03FU6TB Information
ROHM RSS040P03FU6TB technical specifications, attributes, parameters and parts with similar specifications to ROHM RSS040P03FU6TB.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Supplier Device Package
- 8-SOP
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2004
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Termination
- SMD/SMT
- Resistance
- 106MOhm
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 2W Ta
- Power Dissipation
- 2W
- Turn On Delay Time
- 12 ns
- FET Type
- P-Channel
- Rds On (Max) @ Id, Vgs
- 58mOhm @ 4A, 10V
Download datasheets and manufacturer documentation for ROHM RSS040P03FU6TB.
RSS040P03FU6TB Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 800pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4A.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 45 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 58mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-2.5V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4V 10V) reduces this device's overall power consumption.
RSS040P03FU6TB Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 58mOhm
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)
RSS040P03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS040P03FU6TB applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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