ROHM RSR030N06TL
Manufacturer No:
RSR030N06TL
Manufacturer:
ROHM
Package:
TSMT3, 3 PIN
Description:
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN
Quantity:
In Stock :1297
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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RSR030N06TL Information
ROHM RSR030N06TL technical specifications, attributes, parameters and parts with similar specifications to ROHM RSR030N06TL.
- Type
- Parameter
- Pbfree Code
- Yes
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Obsolete
- Ihs Manufacturer
- ROHM CO LTD
- Package Description
- TSMT3, 3 PIN
- Pin Count
- 3
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Samacsys Manufacturer
- ROHM Semiconductor
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Type
- Parameter
- DS Breakdown Voltage-Min
- 60 V
- Drain Current-Max (ID)
- 3 A
- Drain-source On Resistance-Max
- 0.105 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code
- R-PDSO-G3
- JESD-609 Code
- e1
- Moisture Sensitivity Level
- 1
- Number of Elements
- 1
- Number of Terminals
- 3
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM RSR030N06TL.
RSR030N06TL Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 380pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 3A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 30 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4V 10V), this device helps reduce its overall power consumption.
RSR030N06TL Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 30 ns
RSR030N06TL Applications
There are a lot of ROHM Semiconductor
RSR030N06TL applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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