ROHM RSM002P03T2L
Manufacturer No:
RSM002P03T2L
Manufacturer:
ROHM
Package:
SOT-723
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 1.4 ? @ 200mA, 10V ±20V 30pF @ 10V 30V SOT-723
Quantity:
In Stock :5444
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RSM002P03T2L Information
ROHM RSM002P03T2L technical specifications, attributes, parameters and parts with similar specifications to ROHM RSM002P03T2L.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-723
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2007
- JESD-609 Code
- e2
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 2.4Ohm
- Terminal Finish
- TIN COPPER
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -30V
- Technology
- MOSFET (Metal Oxide)
Download datasheets and manufacturer documentation for ROHM RSM002P03T2L.
RSM002P03T2L Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 30pF @ 10V.This device conducts a continuous drain current (ID) of 200mA, which is the maximum continuous current transistor can conduct.Using VGS=-30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.2A.When the device is turned off, a turn-off delay time of 30 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).
RSM002P03T2L Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 30 ns
a 30V drain to source voltage (Vdss)
RSM002P03T2L Applications
There are a lot of ROHM Semiconductor
RSM002P03T2L applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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