ROHM RSH070N05TB1
Manufacturer No:
RSH070N05TB1
Manufacturer:
ROHM
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 25mOhm @ 7A, 10V 20V 1000pF @ 10V 16.8nC @ 5V 45V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :4671
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RSH070N05TB1 Information
ROHM RSH070N05TB1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RSH070N05TB1.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Supplier Device Package
- 8-SOP
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2009
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Max Operating Temperature
- 150°C
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 2W Ta
- Power Dissipation
- 2W
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 25mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 1000pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 7A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 16.8nC @ 5V
Download datasheets and manufacturer documentation for ROHM RSH070N05TB1.
RSH070N05TB1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1000pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 7A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=45V. And this device has 45V drain to source breakdown voltage. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 25mOhm. Operating this transistor requires a 45V drain to source voltage (Vdss).By using drive voltage (4V 10V), this device helps reduce its overall power consumption.
RSH070N05TB1 Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 45V voltage
single MOSFETs transistor is 25mOhm
a 45V drain to source voltage (Vdss)
RSH070N05TB1 Applications
There are a lot of ROHM Semiconductor
RSH070N05TB1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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