ROHM RSD100N10TL
Manufacturer No:
RSD100N10TL
Manufacturer:
ROHM
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 133m ? @ 5A, 10V ±20V 700pF @ 25V 18nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :1022
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RSD100N10TL Information
ROHM RSD100N10TL technical specifications, attributes, parameters and parts with similar specifications to ROHM RSD100N10TL.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- JESD-609 Code
- e2
- Type
- Parameter
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Copper (Sn98Cu2)
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ROHM RSD100N10TL.
RSD100N10TL Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 700pF @ 25V.This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.A maximum pulsed drain current of 20A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (4V 10V).
RSD100N10TL Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 20A.
RSD100N10TL Applications
There are a lot of ROHM Semiconductor
RSD100N10TL applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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