ROHM RS6R060BHTB1

Manufacturer No:

RS6R060BHTB1

Manufacturer:

ROHM

Package:

HSOP-8

Description:

Description: Power Field-Effect Transistor, 60A I(D), 150V, 0.0218ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8

Quantity:

In Stock :3453

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

RS6R060BHTB1 Information

ROHM RS6R060BHTB1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RS6R060BHTB1.

Type
Parameter

RoHS Status
RoHS Compliant

Part Life Cycle Code
Active

Ihs Manufacturer
ROHM CO LTD

Package Description
HSOP-8

Reach Compliance Code
compliant

ECCN Code
EAR99

Factory Lead Time
21 Weeks

Samacsys Manufacturer
ROHM Semiconductor

Avalanche Energy Rating (Eas)
33 mJ

Case Connection
DRAIN

Type
Parameter

Configuration
SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min
150 V

Drain Current-Max (ID)
60 A

Drain-source On Resistance-Max
0.0218 Ω

FET Technology
METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)
33 pF

JESD-30 Code
R-PDSO-F8

Number of Elements
1

Number of Terminals
8

Operating Mode
ENHANCEMENT MODE

Download datasheets and manufacturer documentation for ROHM RS6R060BHTB1.

RS6R060BHTB1 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2750 pF @ 75 V.In order to operate this transistor, a voltage of 150 V is needed from the drain to the source (Vdss).