ROHM RS6P100BHTB1

Manufacturer No:

RS6P100BHTB1

Manufacturer:

ROHM

Package:

8-PowerTDFN

Description:

MOSFET (Metal Oxide) N-Channel 5.9mOhm @ 90A, 10V ±20V 2880 pF @ 50 V 45 nC @ 10 V 100 V 8-PowerTDFN

Quantity:

In Stock :7321

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

RS6P100BHTB1 Information

ROHM RS6P100BHTB1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RS6P100BHTB1.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-PowerTDFN

Supplier Device Package
8-HSOP

Mfr
Rohm Semiconductor

Package
Digi-Reel?

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
6V, 10V

Power Dissipation (Max)
104W (Tc)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
5.9mOhm @ 90A, 10V

Vgs(th) (Max) @ Id
4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
2880 pF @ 50 V

Current - Continuous Drain (Id) @ 25°C
100A (Tc)

Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V

Drain to Source Voltage (Vdss)
100 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM RS6P100BHTB1.

RS6P100BHTB1 Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2880 pF @ 50 V maximal input capacitance.To operate this transistor, you will need a 100 V drain to source voltage (Vdss).