ROHM RS3E095BNGZETB
Manufacturer No:
RS3E095BNGZETB
Manufacturer:
ROHM
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 14.6m ? @ 9.5A, 10V ±20V 680pF @ 15V 8.3nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :8462
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Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RS3E095BNGZETB Information
ROHM RS3E095BNGZETB technical specifications, attributes, parameters and parts with similar specifications to ROHM RS3E095BNGZETB.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2017
- Pbfree Code
- yes
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-G8
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ROHM RS3E095BNGZETB.
RS3E095BNGZETB Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 12.9 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 680pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 9.5A.There is a peak drain current of 36A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
RS3E095BNGZETB Features
the avalanche energy rating (Eas) is 12.9 mJ
based on its rated peak drain current 36A.
a 30V drain to source voltage (Vdss)
RS3E095BNGZETB Applications
There are a lot of ROHM Semiconductor
RS3E095BNGZETB applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
