ROHM RS1P600BETB1
Manufacturer No:
RS1P600BETB1
Manufacturer:
ROHM
Package:
8-PowerTDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 9.7m ? @ 17.5A, 10V ±20V 2200pF @ 50V 33nC @ 10V 100V 8-PowerTDFN
Quantity:
In Stock :4280
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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RS1P600BETB1 Information
ROHM RS1P600BETB1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RS1P600BETB1.
- Type
- Parameter
- Factory Lead Time
- 23 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- S-PDSO-F5
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 3W Ta 35W Tc
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM RS1P600BETB1.
RS1P600BETB1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 49 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2200pF @ 50V maximal input capacitance.A device can conduct a maximum continuous current of [17.5A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 70A.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
RS1P600BETB1 Features
the avalanche energy rating (Eas) is 49 mJ
based on its rated peak drain current 70A.
a 100V drain to source voltage (Vdss)
RS1P600BETB1 Applications
There are a lot of ROHM Semiconductor
RS1P600BETB1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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12.28 M
Listed Part Number
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