ROHM RS1G300GNTB
Manufacturer No:
RS1G300GNTB
Manufacturer:
ROHM
Package:
HSOP-8
Description:
Description: Power Field-Effect Transistor, 30A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8
Quantity:
In Stock :5298
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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RS1G300GNTB Information
ROHM RS1G300GNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RS1G300GNTB.
- Type
- Parameter
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Not Recommended
- Ihs Manufacturer
- ROHM CO LTD
- Package Description
- HSOP-8
- Reach Compliance Code
- not_compliant
- ECCN Code
- EAR99
- Factory Lead Time
- 21 Weeks
- Samacsys Manufacturer
- ROHM Semiconductor
- Avalanche Energy Rating (Eas)
- 136 mJ
- Case Connection
- DRAIN
- Type
- Parameter
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 40 V
- Drain Current-Max (ID)
- 30 A
- Drain-source On Resistance-Max
- 0.003 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code
- R-PDSO-F5
- JESD-609 Code
- e3
- Moisture Sensitivity Level
- 1
- Number of Elements
- 1
- Number of Terminals
- 5
Download datasheets and manufacturer documentation for ROHM RS1G300GNTB.
RS1G300GNTB Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 136 mJ.A device's maximal input capacitance is 4230pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 40V.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
RS1G300GNTB Features
the avalanche energy rating (Eas) is 136 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 120A.
a 40V drain to source voltage (Vdss)
RS1G300GNTB Applications
There are a lot of ROHM Semiconductor
RS1G300GNTB applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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