ROHM RS1E350BNTB
Manufacturer No:
RS1E350BNTB
Manufacturer:
ROHM
Package:
8-PowerTDFN
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 1.7m ? @ 35A, 10V ±20V 7900pF @ 15V 185nC @ 10V 30V 8-PowerTDFN
Quantity:
In Stock :8972
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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RS1E350BNTB Information
ROHM RS1E350BNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RS1E350BNTB.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2015
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F5
Download datasheets and manufacturer documentation for ROHM RS1E350BNTB.
RS1E350BNTB Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 7900pF @ 15V.This device has a continuous drain current (ID) of [35A], which is its maximum continuous current.A maximum pulsed drain current of 140A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
RS1E350BNTB Features
a continuous drain current (ID) of 35A
based on its rated peak drain current 140A.
a 30V drain to source voltage (Vdss)
RS1E350BNTB Applications
There are a lot of ROHM Semiconductor
RS1E350BNTB applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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