ROHM RS1E320GNTB
Manufacturer No:
RS1E320GNTB
Manufacturer:
ROHM
Package:
8-PowerTDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.9m ? @ 32A, 10V ±20V 2850pF @ 15V 42.8nC @ 10V 8-PowerTDFN
Quantity:
In Stock :9985
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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RS1E320GNTB Information
ROHM RS1E320GNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RS1E320GNTB.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Number of Pins
- 8
- Weight
- 70.590313mg
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2015
- Type
- Parameter
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for ROHM RS1E320GNTB.
RS1E320GNTB Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2850pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 74.6 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
RS1E320GNTB Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 74.6 ns
RS1E320GNTB Applications
There are a lot of ROHM Semiconductor
RS1E320GNTB applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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