ROHM RS1E300GNTB
Manufacturer No:
RS1E300GNTB
Manufacturer:
ROHM
Package:
Description:
Tape & Reel (TR) 30V
Quantity:
In Stock :7749
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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RS1E300GNTB Information
ROHM RS1E300GNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RS1E300GNTB.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Surface Mount
- Number of Pins
- 8
- Weight
- 70.590313mg
- Packaging
- Tape & Reel (TR)
- Published
- 2015
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Type
- Parameter
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Max Power Dissipation
- 3W
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F5
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ROHM RS1E300GNTB.
RS1E300GNTB Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 70.5 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.7mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 21 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.
RS1E300GNTB Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 70.5 ns
single MOSFETs transistor is 1.7mOhm
a 30V drain to source voltage (Vdss)
RS1E300GNTB Applications
There are a lot of ROHM Semiconductor
RS1E300GNTB applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
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