ROHM RS1E281BNTB1

Manufacturer No:

RS1E281BNTB1

Manufacturer:

ROHM

Package:

8-PowerTDFN

Description:

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.3m ? @ 28A, 10V ±20V 5100pF @ 15V 94nC @ 10V 30V 8-PowerTDFN

Quantity:

In Stock :9554

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

RS1E281BNTB1 Information

ROHM RS1E281BNTB1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RS1E281BNTB1.

Type
Parameter

Factory Lead Time
16 Weeks

Mounting Type
Surface Mount

Package / Case
8-PowerTDFN

Surface Mount
YES

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Cut Tape (CT)

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
5

Type
Parameter

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
FLAT

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

JESD-30 Code
R-PDSO-F5

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
3W Ta

Operating Mode
ENHANCEMENT MODE

Download datasheets and manufacturer documentation for ROHM RS1E281BNTB1.

Datasheets:

rohmsemiconductor-rs1e281bntb1-datasheets-4159.pdf

RS1E281BNTB1 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 190 mJ.A device's maximal input capacitance is 5100pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 28A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 112A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).