ROHM RS1E180BNTB
Manufacturer No:
RS1E180BNTB
Manufacturer:
ROHM
Package:
Description:
Cut Tape (CT)
Quantity:
In Stock :4166
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RS1E180BNTB Information
ROHM RS1E180BNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RS1E180BNTB.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Packaging
- Cut Tape (CT)
- Published
- 2015
- Pbfree Code
- yes
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Type
- Parameter
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F5
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- DRAIN
- Transistor Application
- SWITCHING
Download datasheets and manufacturer documentation for ROHM RS1E180BNTB.
RS1E180BNTB Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 23.5 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 18A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 72A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.
RS1E180BNTB Features
the avalanche energy rating (Eas) is 23.5 mJ
based on its rated peak drain current 72A.
RS1E180BNTB Applications
There are a lot of ROHM Semiconductor
RS1E180BNTB applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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12.28 M
Listed Part Number
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