ROHM RS1E170GNTB
Manufacturer No:
RS1E170GNTB
Manufacturer:
ROHM
Package:
Description:
Tape & Reel (TR) 30V
Quantity:
In Stock :2180
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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RS1E170GNTB Information
ROHM RS1E170GNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RS1E170GNTB.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Number of Pins
- 8
- Weight
- 70.590313mg
- Packaging
- Tape & Reel (TR)
- Published
- 2016
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Type
- Parameter
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Max Power Dissipation
- 3W
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F5
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ROHM RS1E170GNTB.
RS1E170GNTB Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 17A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 27 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 6.7mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.
RS1E170GNTB Features
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 27 ns
single MOSFETs transistor is 6.7mOhm
a 30V drain to source voltage (Vdss)
RS1E170GNTB Applications
There are a lot of ROHM Semiconductor
RS1E170GNTB applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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