ROHM RS1E130GNTB
Manufacturer No:
RS1E130GNTB
Manufacturer:
ROHM
Package:
8-PowerTDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 11.7m ? @ 13A, 10V ±20V 420pF @ 15V 7.9nC @ 10V 30V 8-PowerTDFN
Quantity:
In Stock :5883
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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RS1E130GNTB Information
ROHM RS1E130GNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RS1E130GNTB.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2013
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F5
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
Download datasheets and manufacturer documentation for ROHM RS1E130GNTB.
RS1E130GNTB Overview
A device's maximum input capacitance is 420pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 13A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 52A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
RS1E130GNTB Features
based on its rated peak drain current 52A.
a 30V drain to source voltage (Vdss)
RS1E130GNTB Applications
There are a lot of ROHM Semiconductor
RS1E130GNTB applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
