RRQ045P03TR-ROHM-Price, Stock & Datasheet

RRQ045P03TR Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1350pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.5A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [110 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 18A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4V 10V).

RRQ045P03TR Features

a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 18A.
a 30V drain to source voltage (Vdss)