ROHM RRH100P03GZETB
Manufacturer No:
RRH100P03GZETB
Manufacturer:
ROHM
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 12.6m ? @ 10A, 10V ±20V 3600pF @ 10V 68nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :5876
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Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RRH100P03GZETB Information
ROHM RRH100P03GZETB technical specifications, attributes, parameters and parts with similar specifications to ROHM RRH100P03GZETB.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Weight
- 850.995985mg
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2012
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Number of Channels
- 1
- Power Dissipation-Max
- 650mW Ta
- Turn On Delay Time
- 25 ns
- FET Type
- P-Channel
- Rds On (Max) @ Id, Vgs
- 12.6m ? @ 10A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 3600pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 10A Ta
Download datasheets and manufacturer documentation for ROHM RRH100P03GZETB.
RRH100P03GZETB Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3600pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10A.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 150 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 25 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4V 10V) reduces this device's overall power consumption.
RRH100P03GZETB Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 150 ns
a 30V drain to source voltage (Vdss)
RRH100P03GZETB Applications
There are a lot of ROHM Semiconductor
RRH100P03GZETB applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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12.28 M
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