ROHM RQ6E045RPTR

Manufacturer No:

RQ6E045RPTR

Manufacturer:

ROHM

Package:

SOT-23-6 Thin, TSOT-23-6

Description:

MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 35m ? @ 4.5A, 10V ±20V 1350pF @ 10V 14nC @ 5V 30V SOT-23-6 Thin, TSOT-23-6

Quantity:

In Stock :8304

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

RQ6E045RPTR Information

ROHM RQ6E045RPTR technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ6E045RPTR.

Type
Parameter

Factory Lead Time
16 Weeks

Mounting Type
Surface Mount

Package / Case
SOT-23-6 Thin, TSOT-23-6

Operating Temperature
150°C TJ

Packaging
Cut Tape (CT)

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Type
Parameter

Power Dissipation-Max
950mW Ta

FET Type
P-Channel

Rds On (Max) @ Id, Vgs
35m ? @ 4.5A, 10V

Vgs(th) (Max) @ Id
2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
1350pF @ 10V

Current - Continuous Drain (Id) @ 25°C
4.5A Ta

Gate Charge (Qg) (Max) @ Vgs
14nC @ 5V

Drain to Source Voltage (Vdss)
30V

Drive Voltage (Max Rds On,Min Rds On)
4V 10V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM RQ6E045RPTR.

Datasheets:

rohmsemiconductor-rq6e045rptr-datasheets-9284.pdf

RQ6E045RPTR Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1350pF @ 10V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).