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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RQ6E030ATTCR Information
ROHM RQ6E030ATTCR technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ6E030ATTCR.
- Type
- Parameter
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-G6
- Type
- Parameter
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Polarity/Channel Type
- P-CHANNEL
- Drain Current-Max (Abs) (ID)
- 3A
- Pulsed Drain Current-Max (IDM)
- 12A
- DS Breakdown Voltage-Min
- 30V
- Avalanche Energy Rating (Eas)
- 3.3 mJ
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
Download datasheets and manufacturer documentation for ROHM RQ6E030ATTCR.
Datasheets:
RQ6E030ATTCR Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3.3 mJ.There is no drain current on this device since the maximum continuous current it can conduct is 3A.There is a peak drain current of 12A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 70mOhm.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.
RQ6E030ATTCR Features
the avalanche energy rating (Eas) is 3.3 mJ
based on its rated peak drain current 12A.
single MOSFETs transistor is 70mOhm
RQ6E030ATTCR Applications
There are a lot of Rohm
RQ6E030ATTCR applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
