ROHM RQ5E020SPTL

Manufacturer No:

RQ5E020SPTL

Manufacturer:

ROHM

Package:

SC-96

Description:

MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 120m ? @ 2A, 10V ±20V 370pF @ 10V 4.3nC @ 5V 30V SC-96

Quantity:

In Stock :5098

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

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SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

RQ5E020SPTL Information

ROHM RQ5E020SPTL technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ5E020SPTL.

Type
Parameter

Factory Lead Time
16 Weeks

Mounting Type
Surface Mount

Package / Case
SC-96

Operating Temperature
150°C TJ

Packaging
Cut Tape (CT)

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Type
Parameter

Power Dissipation-Max
700mW Ta

FET Type
P-Channel

Rds On (Max) @ Id, Vgs
120m ? @ 2A, 10V

Vgs(th) (Max) @ Id
2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
370pF @ 10V

Current - Continuous Drain (Id) @ 25°C
2A Ta

Gate Charge (Qg) (Max) @ Vgs
4.3nC @ 5V

Drain to Source Voltage (Vdss)
30V

Drive Voltage (Max Rds On,Min Rds On)
4V 10V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM RQ5E020SPTL.

RQ5E020SPTL Overview

The maximum input capacitance of this device is 370pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4V 10V), this device helps reduce its power consumption.