ROHM RQ3L050GNTB
Manufacturer No:
RQ3L050GNTB
Manufacturer:
ROHM
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 61m ? @ 5A, 10V ±20V 300pF @ 30V 2.8nC @ 4.5V 60V 8-PowerVDFN
Quantity:
In Stock :3218
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RQ3L050GNTB Information
ROHM RQ3L050GNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ3L050GNTB.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- Type
- Parameter
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F5
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
Download datasheets and manufacturer documentation for ROHM RQ3L050GNTB.
RQ3L050GNTB Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3.9 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 300pF @ 30V.A device's drain current is its maximum continuous current, and this device's drain current is 5A.A maximum pulsed drain current of 20A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
RQ3L050GNTB Features
the avalanche energy rating (Eas) is 3.9 mJ
based on its rated peak drain current 20A.
a 60V drain to source voltage (Vdss)
RQ3L050GNTB Applications
There are a lot of ROHM Semiconductor
RQ3L050GNTB applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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12.28 M
Listed Part Number
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