ROHM RQ3G110ATTB

Manufacturer No:

RQ3G110ATTB

Manufacturer:

ROHM

Package:

8-PowerVDFN

Description:

MOSFET (Metal Oxide) P-Channel 12.4mOhm @ 11A, 10V ±20V 2750 pF @ 20 V 46 nC @ 10 V 40 V 8-PowerVDFN

Quantity:

In Stock :3573

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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Step2：Desiccant Protection

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

RQ3G110ATTB Information

ROHM RQ3G110ATTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ3G110ATTB.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-PowerVDFN

Supplier Device Package
8-HSMT (3.2x3)

Mfr
Rohm Semiconductor

Package
Digi-Reel?

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

Power Dissipation (Max)
2W (Ta)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
P-Channel

Rds On (Max) @ Id, Vgs
12.4mOhm @ 11A, 10V

Vgs(th) (Max) @ Id
2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
2750 pF @ 20 V

Current - Continuous Drain (Id) @ 25°C
11A (Ta), 35A (Tc)

Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V

Drain to Source Voltage (Vdss)
40 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM RQ3G110ATTB.

RQ3G110ATTB Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2750 pF @ 20 V.This transistor requires a drain-source voltage (Vdss) of 40 V.