ROHM RQ3G100GNTB
Manufacturer No:
RQ3G100GNTB
Manufacturer:
ROHM
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 14.3m ? @ 10A, 10V ±20V 615pF @ 20V 8.4nC @ 10V 40V 8-PowerVDFN
Quantity:
In Stock :7329
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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RQ3G100GNTB Information
ROHM RQ3G100GNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ3G100GNTB.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2014
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Resistance
- 11mOhm
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for ROHM RQ3G100GNTB.
RQ3G100GNTB Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 15.6 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 615pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10A amps.As far as peak drain current is concerned, its maximum pulsed current is 40A.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2.5V.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
RQ3G100GNTB Features
the avalanche energy rating (Eas) is 15.6 mJ
a continuous drain current (ID) of 10A
based on its rated peak drain current 40A.
a threshold voltage of 2.5V
a 40V drain to source voltage (Vdss)
RQ3G100GNTB Applications
There are a lot of ROHM Semiconductor
RQ3G100GNTB applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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