ROHM RQ3E180GNTB
Manufacturer No:
RQ3E180GNTB
Manufacturer:
ROHM
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.3m ? @ 18A, 10V ±20V 1520pF @ 15V 22.4nC @ 10V 8-PowerVDFN
Quantity:
In Stock :2876
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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RQ3E180GNTB Information
ROHM RQ3E180GNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ3E180GNTB.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2013
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F5
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ROHM RQ3E180GNTB.
RQ3E180GNTB Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1520pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 18A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [56.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 72A.A turn-on delay time of 16.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
RQ3E180GNTB Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 56.8 ns
based on its rated peak drain current 72A.
RQ3E180GNTB Applications
There are a lot of ROHM Semiconductor
RQ3E180GNTB applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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