ROHM RQ3E160ADTB
Manufacturer No:
RQ3E160ADTB
Manufacturer:
ROHM
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) N-Channel Digi-Reel® 4.5m ? @ 16A, 10V ±20V 2550pF @ 15V 51nC @ 10V 30V 8-PowerVDFN
Quantity:
In Stock :8766
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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RQ3E160ADTB Information
ROHM RQ3E160ADTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ3E160ADTB.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Digi-Reel®
- Published
- 2010
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Resistance
- 3.5mOhm
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F5
Download datasheets and manufacturer documentation for ROHM RQ3E160ADTB.
RQ3E160ADTB Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 23 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2550pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16A amps.As far as peak drain current is concerned, its maximum pulsed current is 64A.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2.5V.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
RQ3E160ADTB Features
the avalanche energy rating (Eas) is 23 mJ
a continuous drain current (ID) of 16A
based on its rated peak drain current 64A.
a threshold voltage of 2.5V
a 30V drain to source voltage (Vdss)
RQ3E160ADTB Applications
There are a lot of ROHM Semiconductor
RQ3E160ADTB applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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