ROHM RQ3E120GNTB
Manufacturer No:
RQ3E120GNTB
Manufacturer:
ROHM
Package:
SMALL OUTLINE, R-PDSO-F5
Description:
Description: Power Field-Effect Transistor, 12A I(D), 30V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN
Quantity:
In Stock :5935
Looking for price or availability? Send us an RFQ and our sales team will respond quickly.
Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
Payment
We support multiple secure payment methods including PayPal, Visa, MasterCard, and American Express. All transactions are protected with advanced encryption to ensure secure and reliable payments.
Authenticity Guarantee
All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.
Quality Assurance
Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.
User Guide
Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.
PURCHASE
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
MEANS OF PAYMENTFor your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.
RFQ (REQUEST FOR QUOTATIONS)Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RQ3E120GNTB Information
ROHM RQ3E120GNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ3E120GNTB.
- Type
- Parameter
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Active
- Ihs Manufacturer
- ROHM CO LTD
- Package Description
- SMALL OUTLINE, R-PDSO-F5
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Factory Lead Time
- 21 Weeks
- Samacsys Manufacturer
- ROHM Semiconductor
- Case Connection
- DRAIN
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Type
- Parameter
- DS Breakdown Voltage-Min
- 30 V
- Drain Current-Max (ID)
- 12 A
- Drain-source On Resistance-Max
- 0.0118 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code
- R-PDSO-F5
- JESD-609 Code
- e3
- Moisture Sensitivity Level
- 1
- Number of Elements
- 1
- Number of Terminals
- 5
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM RQ3E120GNTB.
RQ3E120GNTB Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 590pF @ 15V.This device has a continuous drain current (ID) of [12A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25.5 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 9.6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
RQ3E120GNTB Features
a continuous drain current (ID) of 12A
the turn-off delay time is 25.5 ns
a 30V drain to source voltage (Vdss)
RQ3E120GNTB Applications
There are a lot of ROHM Semiconductor
RQ3E120GNTB applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
