RQ3E100GNTB-ROHM-Price, Stock & Datasheet

RQ3E100GNTB Overview

An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 420pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 22.4 ns.Peak drain current is 40A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.4 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

RQ3E100GNTB Features

a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22.4 ns
based on its rated peak drain current 40A.