ROHM RQ3E100BNTB
Manufacturer No:
RQ3E100BNTB
Manufacturer:
ROHM
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 10.4m ? @ 10A, 10V ±20V 1100pF @ 15V 22nC @ 10V 30V 8-PowerVDFN
Quantity:
In Stock :3683
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RQ3E100BNTB Information
ROHM RQ3E100BNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ3E100BNTB.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2014
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Resistance
- 7.7mOhm
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for ROHM RQ3E100BNTB.
RQ3E100BNTB Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1100pF @ 15V.This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.A maximum pulsed drain current of 40A is the maximum peak drain current rated for this device.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2.5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
RQ3E100BNTB Features
a continuous drain current (ID) of 10A
based on its rated peak drain current 40A.
a threshold voltage of 2.5V
a 30V drain to source voltage (Vdss)
RQ3E100BNTB Applications
There are a lot of ROHM Semiconductor
RQ3E100BNTB applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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12.28 M
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