ROHM RQ3E100ATTB
Manufacturer No:
RQ3E100ATTB
Manufacturer:
ROHM
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 11.4m ? @ 10A, 10V ±20V 1900pF @ 15V 42nC @ 10V 30V 8-PowerVDFN
Quantity:
In Stock :4291
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RQ3E100ATTB Information
ROHM RQ3E100ATTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ3E100ATTB.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Type
- Parameter
- Power Dissipation-Max
- 2W Ta
- FET Type
- P-Channel
- Rds On (Max) @ Id, Vgs
- 11.4m ? @ 10A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 1900pF @ 15V
- Current - Continuous Drain (Id) @ 25°C
- 10A Ta 31A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 42nC @ 10V
- Drain to Source Voltage (Vdss)
- 30V
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- ±20V
Download datasheets and manufacturer documentation for ROHM RQ3E100ATTB.
RQ3E100ATTB Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1900pF @ 15V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
RQ3E100ATTB Features
a 30V drain to source voltage (Vdss)
RQ3E100ATTB Applications
There are a lot of ROHM Semiconductor
RQ3E100ATTB applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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