ROHM RQ3E080GNTB
Manufacturer No:
RQ3E080GNTB
Manufacturer:
ROHM
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 16.7m ? @ 8A, 10V ±20V 295pF @ 15V 5.8nC @ 10V 8-PowerVDFN
Quantity:
In Stock :9237
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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RQ3E080GNTB Information
ROHM RQ3E080GNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ3E080GNTB.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2013
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F5
Download datasheets and manufacturer documentation for ROHM RQ3E080GNTB.
RQ3E080GNTB Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 295pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [8A] according to its drain current.It is [17.3 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 32A.A turn-on delay time of 6.9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
RQ3E080GNTB Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17.3 ns
based on its rated peak drain current 32A.
RQ3E080GNTB Applications
There are a lot of ROHM Semiconductor
RQ3E080GNTB applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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